Yazar "Bengi, A." için listeleme
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Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD
Çörekçi, S.; Öztürk, M. K.; Bengi, A.; Çakmak, M.; Özçelik, S.; Özbay, E. (Springer, 2011)An AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of ...
