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Boron doped graphene based linear dynamic range photodiode

dc.contributor.authorDere, A.
dc.contributor.authorCoşkun, Burhan
dc.contributor.authorTataroğlu, A.
dc.contributor.authorAl-Sehemi, Abdullah G.
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorAlateeq, Hind M. A.
dc.contributor.authorYakuphanoğlu, F.
dc.date.accessioned2021-12-12T17:00:59Z
dc.date.available2021-12-12T17:00:59Z
dc.date.issued2018
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.urihttps://doi.org/10.1016/j.physb.2018.05.046
dc.identifier.urihttps://hdl.handle.net/20.500.11857/3017
dc.description.abstractThe boron-doped graphene oxide film was prepared using drop casting/coating technique. The film was coated by hydrothermal method on p-Si substrate and thus Al/p-Si/B-doped GO/Au diode was fabricated. The structural properties of the film was investigated by SEM and EDS techniques. The optoelectronic behavior of the diode was analyzed under various solar light and frequencies. The diode indicates that the forward current is higher that of reverse current with a rectification ratio (RR = I-F/I-R) of 7.30 x 10(4) at dark and +/- 5 V. The diode electronic parameters of the diode were computed from electrical characteristics. An increase in the photocurrent of the diode with solar light intensity indicates the presence of a photoconduction mechanism. The photoconductive and photovoltaic response of the diode were analyzed using photocurrent measurements. The interface state density (N-ss) of the diode was analyzed from conductance technique. The optoelectrical results of the studied device suggest that the diode can be used in optic communications.en_US
dc.description.sponsorshipScientific Project Unit of Kirklareli University [Klubap 76, Klubap 113]; International Scientific Partnership Program ISPP at King Saud University [0046]en_US
dc.description.sponsorshipThis study was supported by Scientific Project Unit of Kirklareli University under project number: Klubap 113. This study was supported by Scientific Project Unit of Kirklareli University under project number: Klubap 76. The authors extend their appreciation to the International Scientific Partnership Program ISPP at King Saud University for funding this research work through ISPP# 0046.en_US
dc.language.isoengen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.identifier.doi10.1016/j.physb.2018.05.046
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDiodeen_US
dc.subjectBoronen_US
dc.subjectGraphene oxideen_US
dc.subjectIllumination effecten_US
dc.subjectPhotoresponseen_US
dc.titleBoron doped graphene based linear dynamic range photodiodeen_US
dc.typearticle
dc.authoridAl-Sehemi, Abdullah/0000-0002-6793-3038
dc.authoridTataroglu, Adem/0000-0003-2074-574X
dc.authoridAl-Ghamdi, Ahmed/0000-0002-5409-3770
dc.authoridCoskun, Burhan/0000-0002-8242-9921
dc.departmentFakülteler, Fen-Edebiyat Fakültesi, Fizik Bölümü
dc.identifier.volume545en_US
dc.identifier.startpage86en_US
dc.identifier.endpage93en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.authorscopusid56398362600
dc.authorscopusid55556481900
dc.authorscopusid9337459000
dc.authorscopusid6507858932
dc.authorscopusid7007086768
dc.authorscopusid57202380282
dc.authorscopusid22635291900
dc.identifier.wosWOS:000449621100014en_US
dc.identifier.scopus2-s2.0-85048136802en_US
dc.authorwosidAl-Sehemi, Abdullah/AAK-5902-2020
dc.authorwosidAl-Sehemi, Abdullah/J-9967-2012
dc.authorwosidal-sehemi, Abdullah G/AAM-4039-2020
dc.authorwosidTataroglu, Adem/V-8882-2017
dc.authorwosidYakuphanoglu, Fahrettin/C-8365-2012
dc.authorwosidAl-Ghamdi, Ahmed/A-1324-2015


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